发明名称 Low overdrive probes with high overdrive substrate
摘要 A method for testing a semiconductor device is disclosed. The method comprises positioning a probe card comprising a plurality of probes above the semiconductor device and moving the probe card in a vertical direction towards the semiconductor device. The plurality of probes are moving in a vertical direction towards a plurality of electrical structures of the semiconductor device until each probe of the plurality of probes has made mechanical contact with a corresponding electrical structure of the plurality of electrical structures with a minimum quantity of force. The each probe of the plurality of probes absorbs a portion of vertical overdrive after contacting their corresponding electrical structures. The probe card absorbs any remaining vertical overdrive. The vertical overdrive is a continuing vertical movement of the plurality of probes after a first probe of the plurality of probes mechanically contacts a first corresponding electrical structure.
申请公布号 US9599665(B2) 申请公布日期 2017.03.21
申请号 US201313899458 申请日期 2013.05.21
申请人 ADVANTEST CORPORATION 发明人 Hu Ting;Namburi Lakshmikanth
分类号 G01R31/20;G01R31/28 主分类号 G01R31/20
代理机构 代理人
主权项 1. A method for testing a semiconductor device, the method comprising: positioning a probe card comprising a plurality of probes above the semiconductor device; and moving the probe card in a vertical direction towards the semiconductor device, wherein the moving comprises moving in a vertical direction towards a plurality of electrical structures of the semiconductor device until each probe of the plurality of probes has made mechanical contact with a corresponding electrical structure of the plurality of electrical structures with a prescribed quantity of force, wherein each probe of the plurality of probes absorbs a portion of vertical overdrive after contacting its corresponding electrical structure, and wherein the probe card absorbs any remaining vertical overdrive, and wherein vertical overdrive is a continuing vertical movement of the plurality of probes after a first probe of the plurality of probes mechanically contacts a first corresponding electrical structure.
地址 Tokyo JP