发明名称 Reversely-installed photonic crystal LED chip and method for manufacturing same
摘要 A method of fabricating a flip-chip photonic-crystal light-emitting diode (LED) is disclosed. The method includes the steps of: providing an initial substrate including an epitaxial-growth surface and a light-output surface; performing a nanoimprint process on the epitaxial-growth surface of the initial substrate to form a nano-level patterned substrate; forming a flip-chip LED structure on the epitaxial-growth surface of the nano-level patterned substrate; and performing a nanoimprint process on the light-output surface of the nano-level patterned substrate to form the flip-chip photonic-crystal LED. The formation of the photonic-crystal structure on the light-output surface results in enhanced LED light extraction and emission efficiency.
申请公布号 US9601660(B2) 申请公布日期 2017.03.21
申请号 US201314652071 申请日期 2013.12.26
申请人 ENRAYTEK OPTOELECTRONICS CO., LTD. 发明人 Wu Leke
分类号 H01L33/20;H01L33/00;H01L33/06;H01L33/10;H01L33/32;H01L33/64;H01L33/22 主分类号 H01L33/20
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A method of fabricating a flip-chip photonic-crystal light-emitting diode (LED), comprising: providing an initial substrate comprising an epitaxial-growth surface and a light-output surface; performing a nanoimprint process on the epitaxial-growth surface of the initial substrate to form a nano-level patterned substrate; forming a flip-chip LED structure on the epitaxial-growth surface of the nano-level patterned substrate; and performing a nanoimprint process on the light-output surface of the nano-level patterned substrate to form a flip-chip photonic-crystal LED, wherein performing the nanoimprint process on the epitaxial-growth surface of the initial substrate includes: cleaning the initial substrate and forming a first imprint resist layer on the epitaxial-growth surface of the initial substrate;pressing a first imprint mold onto the first imprint resist layer to transfer patterns of the first imprint mold into the first imprint resist layer;removing the first imprint mold and performing an etching process on the first imprint resist layer, thereby forming patterns in the epitaxial-growth surface of the initial substrate; andremoving the first imprint resist layer to form the nano-level patterned substrate.
地址 Shanghai CN