发明名称 |
Reversely-installed photonic crystal LED chip and method for manufacturing same |
摘要 |
A method of fabricating a flip-chip photonic-crystal light-emitting diode (LED) is disclosed. The method includes the steps of: providing an initial substrate including an epitaxial-growth surface and a light-output surface; performing a nanoimprint process on the epitaxial-growth surface of the initial substrate to form a nano-level patterned substrate; forming a flip-chip LED structure on the epitaxial-growth surface of the nano-level patterned substrate; and performing a nanoimprint process on the light-output surface of the nano-level patterned substrate to form the flip-chip photonic-crystal LED. The formation of the photonic-crystal structure on the light-output surface results in enhanced LED light extraction and emission efficiency. |
申请公布号 |
US9601660(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201314652071 |
申请日期 |
2013.12.26 |
申请人 |
ENRAYTEK OPTOELECTRONICS CO., LTD. |
发明人 |
Wu Leke |
分类号 |
H01L33/20;H01L33/00;H01L33/06;H01L33/10;H01L33/32;H01L33/64;H01L33/22 |
主分类号 |
H01L33/20 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. A method of fabricating a flip-chip photonic-crystal light-emitting diode (LED), comprising:
providing an initial substrate comprising an epitaxial-growth surface and a light-output surface; performing a nanoimprint process on the epitaxial-growth surface of the initial substrate to form a nano-level patterned substrate; forming a flip-chip LED structure on the epitaxial-growth surface of the nano-level patterned substrate; and performing a nanoimprint process on the light-output surface of the nano-level patterned substrate to form a flip-chip photonic-crystal LED, wherein performing the nanoimprint process on the epitaxial-growth surface of the initial substrate includes:
cleaning the initial substrate and forming a first imprint resist layer on the epitaxial-growth surface of the initial substrate;pressing a first imprint mold onto the first imprint resist layer to transfer patterns of the first imprint mold into the first imprint resist layer;removing the first imprint mold and performing an etching process on the first imprint resist layer, thereby forming patterns in the epitaxial-growth surface of the initial substrate; andremoving the first imprint resist layer to form the nano-level patterned substrate. |
地址 |
Shanghai CN |