| 发明名称 | Na dosing control method | ||
| 摘要 | A method includes placing at least two substrates on a substrate carrier at a distance from one another, placing the substrate carrier in a reaction chamber, depositing a precursor on the at least two substrates, and performing a first annealing process on the at least two substrates. The at least two substrates include a first content of a first material. The distance between the at least two substrates is based on the first content of the first material and at least one processing parameter. The disclosed method advantageously provides for improved Na-dosing control. | ||
| 申请公布号 | US9601653(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201414303624 | 申请日期 | 2014.06.13 |
| 申请人 | Taiwan Semiconductor Manufacturing Co., Ltd. | 发明人 | Xu Li;Lee Wen-Chin |
| 分类号 | H01L21/02;H01L31/18;H01L31/032 | 主分类号 | H01L21/02 |
| 代理机构 | Duane Morris LLP | 代理人 | Duane Morris LLP |
| 主权项 | 1. A method, comprising: placing at least two substrates on a substrate carrier at a distance from one another, the at least two substrates including a first content by weight of a first material, wherein the distance between the at least two substrates is arranged in proportional to the first content by weight of the first material and at least one processing parameter; placing the substrate carrier in a reaction chamber; and performing a first annealing process on the at least two substrates. | ||
| 地址 | Hsin-Chu TW | ||