发明名称 Organic light emitting device and method for manufacturing the same
摘要 Disclosed is an organic light emitting device (OLED) that may include a first electrode on a substrate, the first electrode having a pattern of a plurality of cells, with each cell defined with an emitting area and a non-emitting area; a second electrode facing the first electrode; an organic layer between the first electrode and the second electrode; a short-circuit preventing layer contacting at least a portion of the first electrode; and an auxiliary electrode on the short-circuit preventing layer in the non-emitting area of each cell, wherein an aperture ratio of the short-circuit preventing layer and the auxiliary electrode in each cell is 30% or more.
申请公布号 US9601555(B2) 申请公布日期 2017.03.21
申请号 US201514701069 申请日期 2015.04.30
申请人 LG DISPLAY CO., LTD. 发明人 Lee Yeon Keun
分类号 H01L27/32;H01L51/52;H01L51/00;H01L51/50;H01L51/56 主分类号 H01L27/32
代理机构 Dentons US LLP 代理人 Dentons US LLP
主权项 1. An organic light emitting device (OLED), comprising: a first electrode on a substrate, the first electrode having a pattern of a plurality of cells, with each cell defined with an emitting area and a non-emitting area; a short-circuit preventing layer on the first electrode, the short-circuit preventing layer contacting at least a portion of the first electrode; an auxiliary electrode on the short-circuit preventing layer in the non-emitting area of each cell; a second electrode on the auxiliary electrode; and an organic layer between the first electrode and the second electrode, wherein an aperture ratio of each cell is 30% or more, and wherein, at a current density of any one value of 1 mA/cm2 to 5 mA/cm2, the short-circuit preventing layer has a thickness direction resistance value at which an operating voltage increase rate of the following Equation 1 and a numerical value of leakage current to operating current of the following Equation 2 simultaneously satisfy 0.03 or less:Vt-VoVo[Equation⁢⁢1]IsIt[Equation⁢⁢2] where Vt(V) denotes an operating voltage of the OLED to which the short-circuit preventing layer is applied and in which a short-circuit defect is absent, Vo(V) denotes an operating voltage of the OLED to which the short-circuit preventing layer is not applied and in which the short-circuit defect is absent, It(mA) denotes an operating current of the OLED having the same organic structure to which the short-circuit preventing layer is applied and in which the short-circuit defect is absent, and Is(mA) denotes a leakage current in a defect area of the OLED to which the short-circuit preventing layer is applied and in which the short-circuit defect is present.
地址 Seoul KR