Dual active layer semiconductor device and method of manufacturing the same

摘要

Some embodiments include a semiconductor device. The semiconductor device includes a transistor having a gate metal layer, a transistor composite active layer, and one or more contact elements over the transistor composite active layer. The transistor composite active layer includes a first active layer and a second active layer, the first active layer is over the gate metal layer, and the second active layer is over the first active layer. Meanwhile, the semiconductor device also includes one or more semiconductor elements forming a diode over the transistor. The semiconductor element(s) have an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Other embodiments of related systems and methods are also disclosed.

主权项

1. A semiconductor device comprising:
a transistor comprising:
a gate metal layer;a transistor composite active layer comprising a first active layer and a second active layer, the first active layer being over the gate metal layer and the second active layer being over the first active layer; andone or more contact elements over the transistor composite active layer; and one or more semiconductor elements forming a diode over the transistor, the one or more semiconductor elements comprising:
an N-type layer over the transistor;an I layer over the N-type layer; anda P-type layer over the I layer; wherein:
the I layer comprises a film stress of greater than or equal to approximately −150 MegaPascals and less than or equal to approximately −50 MegaPascals.