Method of fabricating a bond pad structure

摘要

A method of forming a bond pad structure is provided. The method includes forming a first conductive layer over a substrate and depositing a first dielectric layer over the first conductive layer. The first dielectric layer is patterned to form a contiguous planar path substantially parallel to a top surface of the substrate. Patterning the first dielectric layer includes defining a dielectric region of the first dielectric layer surrounded by a portion of the contiguous planar path, and forming a first via hole in the dielectric region. The contiguous planar path and the via hole are filled with a conductive material. The conductive material in the contiguous planar path forms a second conductive layer, and the contiguous planar path extends from a first lateral side wall of the second conductive layer to a second lateral sidewall of the second conductive layer. A bond pad is formed over the second conductive layer, and the bond pad is electrically connected to the second conductive layer.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a first conductive layer disposed over a substrate; depositing a first dielectric layer over the first conductive layer; patterning the first dielectric layer to form a contiguous planar path substantially parallel to a top surface of the substrate, wherein the patterning includes:
defining a first dielectric region of the first dielectric layer surrounded by the contiguous planar path;defining a second dielectric region of the first dielectric layer surrounded by the contiguous planar path, wherein the first and second dielectric regions are separated by the contiguous planar path; andforming a first via hole in the first dielectric region; filling the contiguous planar path and the first via hole with a conductive material, wherein the conductive material in the contiguous planar path forms a second conductive layer, wherein the contiguous planar path extends from a first lateral side wall of the second conductive layer to a second lateral sidewall of the second conductive layer; and forming a bond pad over the second conductive layer, wherein the bond pad is electrically connected to the second conductive layer.