| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device of the present invention includes a semiconductor element having an upper surface and a lower surface, a metal plate thermally connected to the lower surface, an upper surface electrode soldered to the upper surface, an insulating sheet formed on the upper surface electrode so as to be in surface contact with the upper surface electrode, a shielding plate formed on the insulating sheet so as to be in surface contact with the insulating sheet, the shielding plate shielding against radiation noise, and a resin with which the semiconductor element is covered, while a portion of the upper surface electrode, a portion of the shielding plate and a lower surface of the metal plate are exposed to the outside, wherein the heat conductivity of the insulating sheet is higher than the heat conductivity of the resin. | ||
| 申请公布号 | US9601408(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201214423513 | 申请日期 | 2012.10.25 |
| 申请人 | Mitsubishi Electric Corporation | 发明人 | Saito Shoji;Hussein Khalid Hassan;Iizuka Arata |
| 分类号 | H01L23/00;H01L23/433;H01L23/36;H01L23/29;H01L23/31;H01L23/12;H01L23/552;H01L23/28;H01L23/495 | 主分类号 | H01L23/00 |
| 代理机构 | Studebaker & Brackett PC | 代理人 | Studebaker & Brackett PC |
| 主权项 | 1. A semiconductor device comprising: a semiconductor element having an upper surface and a lower surface; a metal plate thermally connected to the lower surface; an upper surface electrode soldered to the upper surface; an insulating sheet formed on the upper surface electrode so as to be in surface contact with the upper surface electrode; a shielding plate formed on the insulating sheet so as to be in surface contact with the insulating sheet, the shielding plate shielding against radiation noise; and a resin with which the semiconductor element is covered, while a portion of the upper surface electrode, a lateral portion of the shielding plate and a lower surface of the metal plate are exposed to the outside of the semiconductor device, wherein the heat conductivity of the insulating sheet is higher than the heat conductivity of the resin. | ||
| 地址 | Tokyo JP | ||