| 发明名称 | Semiconductor device comprising an oxygen diffusion barrier and manufacturing method | ||
| 摘要 | An embodiment of a method of manufacturing a semiconductor device includes forming an oxygen diffusion barrier on a first surface of a Czochralski or magnetic Czochralski silicon substrate. A silicon layer is formed on the oxygen diffusion barrier. P-doped and n-doped semiconductor device regions are formed in the silicon layer. The method also includes forming first and second load terminal contacts. | ||
| 申请公布号 | US9601368(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201514801087 | 申请日期 | 2015.07.16 |
| 申请人 | Infineon Technologies AG | 发明人 | Schulze Hans-Joachim;Baumgartl Johannes |
| 分类号 | H01L31/00;H01L21/768;H01L23/48 | 主分类号 | H01L31/00 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: forming an oxygen diffusion barrier on a first surface of a Czochralski or magnetic Czochralski silicon substrate; forming a silicon layer on the oxygen diffusion barrier; forming p-doped and n-doped semiconductor device regions in the silicon layer; and forming first and second load terminal contacts. | ||
| 地址 | Neubiberg DE | ||