发明名称 |
Solid state lighting devices without converter materials and associated methods of manufacturing |
摘要 |
Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength. |
申请公布号 |
US9601658(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201514810092 |
申请日期 |
2015.07.27 |
申请人 |
Micron Technology, Inc. |
发明人 |
Ren Zaiyuan;Gehrke Thomas |
分类号 |
H01L33/06;H01L33/30;C30B25/00;H01L33/08;H01L33/20;H01L33/32;H01L33/00;H01L21/02 |
主分类号 |
H01L33/06 |
代理机构 |
Perkins Coie LLP |
代理人 |
Perkins Coie LLP |
主权项 |
1. A solid state lighting (SSL) device comprising:
a substrate material; a first semiconductor material on the substrate material; a second semiconductor material spaced apart from the first semiconductor material; an active region between the first and second semiconductor materials, the active region having a first sub-region and a second sub-region proximate the first sub-region, wherein the first sub-region is configured to produce a first emission and the second sub-region is configured to produce a second emission different then the first emission, and wherein—
the first sub-region includes a first plurality of InGaN materials having a first indium concentration,the second sub-region includes a second plurality of InGaN materials having a second indium concentration, andat least one of the first indium concentration and the second indium concentration increases or decreases along a thickness direction of the respective sub-region,wherein at least one of the first sub-region and the second sub-region comprises an InGaN bulk material. |
地址 |
Boise ID US |