Semiconductor device and method of forming conductive vias with trench in saw street

摘要

A semiconductor wafer has a plurality of semiconductor die separated by a peripheral region. A trench is formed in the peripheral region of the wafer. A via is formed on the die. The trench extends to and is continuous with the via. A first conductive layer is deposited in the trench and via to form conductive TSV. The first conductive layer is conformally applied or completely fills the trench and via. The trench has a larger area than the vias which accelerates formation of the first conductive layer. A second conductive layer is deposited over a front surface of the die. The second conductive layer is electrically connected to the first conductive layer. The first and second conductive layers can be formed simultaneously. A portion of a back surface of the wafer is removed to expose the first conductive layer. The die can be electrically interconnected through the TSVs.

主权项

1. A method of making a semiconductor device, comprising:
providing a first semiconductor die; providing a second semiconductor die; forming a first via through a first surface of the first semiconductor die; forming a second via through the first surface of the first semiconductor die; forming a trench in a peripheral region between the first semiconductor die and second semiconductor die and extending parallel with adjacent edges of the first semiconductor die from the first via to the second via; depositing a first conductive layer conformally in the trench and extending continuously from the first via to the second via; back-grinding a second surface of the semiconductor die opposite the first surface to remove a portion of the first conductive layer in the trench; and removing the peripheral region between the first semiconductor die and second semiconductor die to electrically isolate the first via from the second via.