Method of localized annealing of semi-conducting elements using a reflective area

摘要

A method of making crystal semi-conducting material-based elements, including providing a support having amorphous semi-conducting material-based semi-conducting elements, the support being further provided with one or more components and with a reflective protective area configured so as to reflect a light radiation in a given wavelength range, exposing the element(s) to a laser radiation emitting in the given wavelength range so as to recrystallize the elements, the reflective protective area being arranged on the support relative to the elements and to the components so as to reflect the laser radiation and protect the components from this radiation.

主权项

1. A method for modifying the atomic arrangement of semi-conducting elements by annealing, comprising the steps of:
providing a support having one or more semi-conducting elements the atomic arrangement of which is desired to be modified, the support being further provided with one or more components and with at least one reflective protective area, the reflective protective area being a photonic crystal and configured so as to reflect a light radiation in a given wavelength range, exposing the element(s) to a radiation emitting in said given wavelength range so as to carry out annealing of said element(s), the reflective protective area being arranged on the support relative to said element(s) and to component(s) so as to reflect the radiation and protect the component(s) from this radiation, while allowing the exposure of the element(s) to the radiation.