Thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display device

摘要

A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The array substrate comprises: a base substrate and an electrode arranged on the base substrate. The electrode comprises: an aluminum layer or an aluminum alloy layer on the base substrate; and a first barrier layer arranged on the aluminum layer or the aluminum alloy layer and configured for preventing the aluminum layer or the aluminum alloy layer from producing hillocks. The array substrate can eliminate bad phenomenon that the metal aluminum or aluminum alloy formed on the base substrate produces hillocks when subjected to high temperature.

主权项

1. A thin film transistor, comprising a base substrate and an electrode arranged on the base substrate, wherein the electrode comprises:
an aluminum layer or an aluminum alloy layer, arranged on the base substrate; a first barrier layer, arranged on the aluminum layer or the aluminum alloy layer, and configured for preventing the aluminum layer or the aluminum alloy layer from producing hillocks; a second barrier layer arranged between the base substrate and the aluminum layer or the aluminum alloy layer and configured for preventing the aluminum layer or the aluminum alloy layer from producing hillocks, wherein the second barrier layer comprises an aluminum composite layer doped with nitrogen ions which conducts electricity; and a third barrier layer arranged between the aluminum layer or the aluminum alloy layer and the first barrier layer, wherein the third barrier layer and the first barrier layer comprise a same element aluminum.