Plasma processing method and plasma processing apparatus

摘要

A plasma processing method is provided. In the method, a distribution of an amount of processing within a surface of a substrate by a plasma process performed on a film deposited on the substrate is obtained. Next, a flow speed of the plasma processing gas is adjusted by increasing the flow speed of the plasma processing gas supplied to a first area where the amount of processing is expected to be increased or by decreasing the flow speed of the plasma processing gas supplied to a second area where the amount of processing is expected to be decreased. Then, the plasma process is performed on the film deposited on the substrate by supplying the plasma processing gas having the adjusted flow speed into the predetermined plasma process area.

主权项

1. A plasma processing method for performing a plasma process on a film deposited on a substrate by supplying a plasma processing gas into a predetermined plasma process area and converting the supplied plasma processing gas to plasma in a plasma generation area formed in the predetermined plasma process area, the method comprising steps of:
placing a substrate on a turntable provided in a process chamber, the predetermined plasma process area being provided in a predetermined area along a rotational direction of the turntable and having a ceiling surface and a side wall to define the predetermined plasma area above the turntable, the plasma generation area being located in the vicinity of the ceiling surface within the predetermined plasma process area; obtaining a distribution of an amount of processing within a surface of the substrate by a plasma process performed on a film deposited on the substrate, the plasma process being performed on the film deposited on the substrate every time the substrate passes through the predetermined plasma process area by continuously rotating the turntable for a predetermined period of time; adjusting a flow speed of the plasma processing gas so as to cause the flow speed of the plasma processing gas in the plasma generation area to become substantially uniform by increasing the flow speed of the plasma processing gas supplied to a first area where the amount of processing is expected to be increased so as to make the flow speed in the first area higher than the flow speed in another area or by decreasing the flow speed of the plasma processing gas supplied to a second area where the amount of processing is expected to be decreased so as to make the flow speed in the second area lower than the flow speed in another area; and performing the plasma process on the film deposited on the substrate by supplying the plasma processing gas having the adjusted flow speed into the predetermined plasma process area, the plasma processing gas being supplied from a plurality of locations provided in the predetermined plasma process area, the plasma processing gas being supplied upward from at least one of the plurality of locations.