Semiconductor device and method

摘要

A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.

主权项

1. A semiconductor device comprising:
a first semiconductor die bonded to a second semiconductor die; a contact etch stop layer in physical contact with at least three sides of the first semiconductor die and a top surface of the second semiconductor die; a dielectric material on an opposite side of the contact etch stop layer than the second semiconductor die and having a top surface planar with the contact etch stop layer, wherein the dielectric material extends from the top surface of the dielectric material to an opposite surface of the dielectric material, wherein the opposite surface is in contact with the contact etch stop layer; a first through via extending through the contact etch stop layer and the first semiconductor die; and a second through via extending through the dielectric material and the contact etch stop layer.