| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device according to an embodiment includes a conductive region including titanium (Ti), oxygen (O), at least one first element from zirconium (Zr) and hafnium (Hf), and at least one second element from vanadium (V), niobium (Nb), and tantalum (Ta), an n-type first SiC region, a p-type second SiC region provided between the conductive region and the n-type first SiC region, a gate electrode, and a gate insulating layer provided between the conductive region, the p-type second SiC region, the n-type first SiC region, and the gate electrode. |
| 申请公布号 |
US2017077288(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615252480 |
申请日期 |
2016.08.31 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
SHIMIZU Tatsuo;llJIMA Ryosuke |
| 分类号 |
H01L29/78;H01L21/04;H01L29/66;H01L29/47;H01L29/16;H01L29/417 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a conductive region including titanium (Ti), oxygen (O), at least one first element from zirconium (Zr) and hafnium (Hf), and at least one second element from vanadium (V), niobium (Nb), and tantalum (Ta); an n-type first SiC region; a p-type second SiC region provided between the conductive region and the n-type first SiC region; a gate electrode; and a gate insulating layer provided between the conductive region, the p-type second SiC region, the n-type first SiC region, and the gate electrode. |
| 地址 |
Minato-ku JP |
