Fin Field Effect Transistor (FinFET) Device with Controlled End-to-End Critical Dimension and Method for Forming the Same

摘要

A method for forming a fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a substrate and a first fin structure and a second fin structure extending above the substrate. The FinFET device structure also includes a first transistor formed on the first fin structure and a second transistor formed on the second fin structure. The FinFET device structure further includes an inter-layer dielectric (ILD) structure formed in an end-to-end gap between the first transistor and the second transistor, and the end-to-end gap has a width in a range from about 20 nm to about 40 nm.

主权项

1. A method for forming a semiconductor device structure, comprising:
providing a substrate; forming a first fin structure and a second fin structure extending from the substrate by etching a portion of the substrate; forming a polysilicon layer and a masking layer over the first fin structure and the second fin structure; patterning the masking layer to form a first opening in the masking layer, wherein the first opening has a first dimension; lining the first opening to form a second opening, wherein the second opening has a second dimension and the second dimension is smaller than the first dimension; and patterning the polysilicon layer through the second opening to form an end-to-end gap between the first fin structure and the second fin structure .