发明名称 ION COLLECTOR FOR USE IN PLASMA SYSTEMS
摘要 An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.
申请公布号 US2017076920(A1) 申请公布日期 2017.03.16
申请号 US201514850623 申请日期 2015.09.10
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 CHEN Otto;WU Joseph;CHEN C.C.
分类号 H01J37/32;H01L21/67 主分类号 H01J37/32
代理机构 代理人
主权项 1. A method of controlling a plasma system, comprising: determining an ion distribution at a plurality of individually measurable locations around a substrate support; comparing the measured ion distribution between at least two of the individually measurable locations; and adjusting parameters of the plasma system if a difference between the measured ion distribution between at least two of the individually measurable locations is greater than a threshold.
地址 Taiwan TW