MULTI-BIT MRAM CELL AND METHOD FOR WRITING AND READING TO SUCH MRAM CELL

摘要

A multi-bit magnetic random access memory (MRAM) cell including a magnetic tunnel junction including: a first magnetic storage layer, a second magnetic storage layer, a magnetic sense layer, a first spacer layer between the first magnetic storage layer and the magnetic sense layer, and a second spacer layer between the second magnetic storage layer and the sense layer. The first and second storage magnetization are switchable between m directions to store data corresponding to one of m2 logic states, with m>2. The present disclosure further concerns a method for writing and reading to the MRAM cell and to memory devices including multi-bit MRAM cells.

主权项

1. A magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction including:
a first magnetic storage layer having a first storage magnetization direction being pinned when the magnetic tunnel junction is at a low threshold temperature and freely switchable when the magnetic tunnel junction is at a first high threshold temperature; a second magnetic storage layer having a second storage magnetization direction being pinned when the magnetic tunnel junction is at the low threshold temperature and freely switchable when the magnetic tunnel junction is at a second high threshold temperature lower than the first high threshold temperature and higher than the low threshold temperature; a magnetic sense layer having a sense magnetization that is freely switchable; a first spacer layer between the first magnetic storage layer and the magnetic sense layer; a second spacer layer between the second magnetic storage layer and the sense layer; the first and second storage magnetization being switchable between m directions to store data corresponding to one of m2 logic states, with m>2.