SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING THEM

摘要

A silicon carbide single-crystal substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface has a maximum diameter of not less than 100 mm. The first main surface includes a first central region excluding a region within 3 mm from an outer circumference of the first main surface. When the first central region is divided into first square regions each having a side of 250 μm, each of the first square regions has an arithmetic average roughness (Sa) of less than 0.2 nm, and an oxygen concentration in each of the first square regions is not less than 5 atom % and less than 20 atom %.

主权项

1: A silicon carbide single-crystal substrate including a first main surface and a second main surface opposite to the first main surface,
the first main surface having a maximum diameter of not less than 100 mm, the first main surface including a first central region excluding a region within 3 mm from an outer circumference of the first main surface, when the first central region is divided into first square regions each having a side of 250 μm, each of the first square regions having an arithmetic average roughness (Sa) of less than 0.2 nm, and an oxygen concentration in each of the first square regions being not less than 5 atom % and less than 20 atom %.