发明名称 METHOD OF CHEMICAL MECHANICAL POLISHING OF ALUMINA
摘要 A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface. The polydispersity is determined by a polydispersity formula for a distribution width (w) involving width w1 and width w2 at a second larger particle size. The polydispersity formula=(w2−w1)×100/dav which includes 63% of a total of the colloidal particles by volume and day is an average particle size of the colloidal particles.
申请公布号 US2017072530(A1) 申请公布日期 2017.03.16
申请号 US201615341130 申请日期 2016.11.02
申请人 SINMAT, INC. ;UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. 发明人 SINGH RAJIV K.;BALASUNDARAM KANNAN;ARJUNAN ARUL CHAKKARAVARTHI;SINGH DEEPIKA;BAI WEI
分类号 B24B37/20;C09G1/02;C23F3/00 主分类号 B24B37/20
代理机构 代理人
主权项 1. A method of chemical mechanical polishing (CMP), comprising: providing a slurry including: a plurality of colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water, at least one particle feature selected from: (i) said plurality of colloidal particles having a polydispersity >30% determined by a polydispersity formula for a distribution width (w) involving a first width (w1) at a first particle size and a second width (w2) at a second larger particle size, said polydispersity formula=(w2−w1)×100/dav which includes 63% of a total of said plurality of colloidal particles by volume and said dav is an average particle size of said plurality of colloidal particles, and (ii) mixed particle types comprising said plurality of colloidal particles with an average primary particle size >50 nm mixed with fumed oxide particles having an average primary particle size <25 nm, and placing a substrate having an alumina surface into a CMP apparatus having a rotating polishing pad, and performing CMP with said rotating polishing pad and said slurry to polish said alumina surface.
地址 Gainesville FL US