发明名称 ELECTRICAL CONTACT MATERIAL, METHOD OF PRODUCING AN ELECTRICAL CONTACT MATERIAL, AND TERMINAL
摘要 An electrical contact material (10) having: a conductive substrate (1) formed from copper or a copper alloy; a first intermediate layer (2) provided on the conductive substrate (1); a second intermediate layer (3) provided on the first intermediate layer (2); and an outermost layer (4) formed from tin or a tin alloy and provided on the second intermediate layer (3), wherein the first intermediate layer (2) is constructed as one layer of grains extending from the conductive substrate (1) side to the second intermediate layer (3) side, and wherein, in the first intermediate layer (2), the density of grain boundaries (5b) extending in a direction in which the angle formed by the grain boundary in interest and the interface between the conductive substrate and the first intermediate layer is 45° or greater, is 4 μm/μm2 or less; a method of producing the same; and a terminal.
申请公布号 US2017076834(A1) 申请公布日期 2017.03.16
申请号 US201615363518 申请日期 2016.11.29
申请人 FURUKAWA ELECTRIC CO., LTD. ;FURUKAWA AUTOMOTIVE SYSTEMS INC. 发明人 OKUNO Yoshikazu;KOBAYASHI Yoshiaki;NAKATSUGAWA Tatsuya;MITOSE Kengo;TACHIBANA Akira;KAWATA Shingo
分类号 H01B1/02;C25D3/12;C25D3/38;C25D3/30;C22F1/08;C25D5/50;C25D7/00;C22F1/16;C22F1/10;B32B15/01;C25D5/12 主分类号 H01B1/02
代理机构 代理人
主权项 1. An electrical contact material having: a conductive substrate formed from copper or a copper alloy; a first intermediate layer provided on the conductive substrate; a second intermediate layer provided on the first intermediate layer; and an outermost layer formed from tin or a tin alloy and provided on the second intermediate layer, wherein the first intermediate layer is constructed as one layer of grains extending from the conductive substrate side to the second intermediate layer side, and wherein, in the first intermediate layer, the density of grain boundaries extending in a direction in which the angle formed by the grain boundary in interest and the interface between the conductive substrate and the first intermediate layer is 45° or greater, is 4 μm/μm2 or less.
地址 Tokyo JP
您可能感兴趣的专利