CMOS-BASED SEMICONDUCTOR DEVICE ON MICRO-HOTPLATE AND METHOD OF FABRICATION

摘要

It is disclosed herein a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device is made using partly CMOS or CMOS based processing steps, and it includes a semiconductor substrate, a dielectric region over the semiconductor substrate, a heater within the dielectric region and a patterned layer of noble metal above the dielectric region. The method includes the deposition of a photoresist material over the dielectric region, and patterning the photo-resist material to form a patterned region over the dielectric region. The steps of depositing the photo-resist material and patterning the photo-resist material may be performed in sequence using similar photolithography and etching steps to those used in a CMOS process. The resulting semiconductor device is then subjected to further processing steps which ensure that a dielectric membrane and a metal structure within the membrane are formed in the patterned region over the dielectric region.

主权项

1. A method of manufacturing a microhotplate comprising a semiconductor substrate, a dielectric region over the semiconductor substrate, a resistive heater within the dielectric region, the method comprising:
forming the semiconductor substrate, the dielectric region and the resistive heater using complementary metal oxide semiconductor, CMOS, compatible processing steps; depositing a photo-resist material over the dielectric region using the CMOS compatible processing steps; patterning the photo-resist material to form a patterned region over the dielectric region using the CMOS compatible processing steps; etching at least a portion of the semiconductor substrate to form a dielectric membrane, wherein the steps of depositing the photo-resist material, patterning the photo-resist material and etching the portion of the semiconductor substrate are performed in sequence; and subjecting the dielectric membrane to a further process which ensures that a metal structure is deposited in the patterned region over the dielectric region.