| 发明名称 |
PHOTOELECTRIC CONVERSION ELEMENT, SOLAR BATTERY, SOLAR BATTERY MODULE, AND SOLAR POWER GENERATION SYSTEM |
| 摘要 |
A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light-absorbing layer containing a chalcopyrite-type compound containing a group Ib element, a group IIIb element, and a group VIb element between the first electrode and the second electrode. A region in which concentration of the group Ib element in the light-absorbing layer is from 0.1 to 10 atom %, both inclusive, is included in a region up to a depth of 10 nm in a direction from a principal plane of the light-absorbing layer on a side of the second electrode to a side of the first electrode. |
| 申请公布号 |
US2017077326(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615256901 |
申请日期 |
2016.09.06 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Shibasaki Soichiro;Hiraga Hiroki;Nakagawa Naoyuki;Shiokawa Miyuki;Saito Hitomi;Yamazaki Mutsuki;Yamamoto Kazushige |
| 分类号 |
H01L31/032;H01L31/0445;H01L31/047 |
主分类号 |
H01L31/032 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photoelectric conversion element comprising:
a first electrode; a second electrode; and a light-absorbing layer containing a chalcopyrite-type compound containing a group Ib element, a group IIIb element, and a group VIb element between the first electrode and the second electrode, wherein a region in which concentration of the group Ib element in the light-absorbing layer is from 0.1 to 10 atom %, both inclusive, is included in a region up to a depth of 10 nm in a direction from a principal plane of the light-absorbing layer on a side of the second electrode to a side of the first electrode. |
| 地址 |
Tokyo JP |
