MONOLITHIC INTEGRATION TECHNIQUES FOR FABRICATING PHOTODETECTORS WITH TRANSISTORS ON SAME SUBSTRATE

摘要

Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.

主权项

1. A method for fabricating a photodetector and a transistor on a same semiconductor substrate, the method comprising:
forming the transistor on a semiconductor substrate; after the transistor is formed and before an active region of the photodetector is formed on the semiconductor substrate, forming one or more contact plugs for the transistor; forming the active region of the photodetector on the semiconductor substrate; and after the photodetector is formed, forming one or more contact plugs for the photodetector.