发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type that is between the first electrode and the second electrode. A second semiconductor region is adjacent to the first semiconductor region along a first direction and includes a second conductivity type material. A first insulating region is provided within the second semiconductor region. A third electrode is provided on the first semiconductor region via a second insulating region. |
申请公布号 |
US2017077298(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201615060526 |
申请日期 |
2016.03.03 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITO Kankichi;OKUMURA Hideki |
分类号 |
H01L29/78;H01L29/66;H01L29/45;H01L29/49;H01L29/06;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a first semiconductor region between a first electrode and a second electrode and including a first conductivity type material; a second semiconductor region including a second conductivity type material and adjacent to the first semiconductor region in a first direction; a first insulating region within the second semiconductor region; and a third electrode on the first semiconductor region via a second insulating region. |
地址 |
Tokyo JP |