发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type that is between the first electrode and the second electrode. A second semiconductor region is adjacent to the first semiconductor region along a first direction and includes a second conductivity type material. A first insulating region is provided within the second semiconductor region. A third electrode is provided on the first semiconductor region via a second insulating region.
申请公布号 US2017077298(A1) 申请公布日期 2017.03.16
申请号 US201615060526 申请日期 2016.03.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO Kankichi;OKUMURA Hideki
分类号 H01L29/78;H01L29/66;H01L29/45;H01L29/49;H01L29/06;H01L29/423 主分类号 H01L29/78
代理机构 代理人
主权项 1. A semiconductor device, comprising: a first semiconductor region between a first electrode and a second electrode and including a first conductivity type material; a second semiconductor region including a second conductivity type material and adjacent to the first semiconductor region in a first direction; a first insulating region within the second semiconductor region; and a third electrode on the first semiconductor region via a second insulating region.
地址 Tokyo JP