SEMICONDUCTOR DEVICE WITH GATE INSIDE U-SHAPED CHANNEL AND METHODS OF MAKING SUCH A DEVICE

摘要

One illustrative method disclosed herein includes, among other things, forming a trench in a semiconductor substrate, forming a liner semiconductor material above the entire interior surface of the trench, the liner semiconductor material defining a transistor cavity, forming a gate structure that is at least partially positioned within the transistor cavity, and performing at least one epitaxial deposition process to form a source region structure and a drain region structure on opposite sides of the gate structure, wherein at least a portion of each of the source region structure and the drain region structure is positioned within the transistor cavity.

主权项

1. A method of forming a transistor device, said transistor device having a channel region and a gate width direction, the method comprising:
forming a trench in a semiconductor substrate, said trench having an interior surface; forming a liner semiconductor material above the entire interior surface of said trench, said liner semiconductor material defining a transistor cavity; forming a gate structure that is at least partially positioned within said transistor cavity; and performing at least one epitaxial deposition process to form a source region structure and a drain region structure on opposite sides of said gate structure, wherein at least a portion of each of said source region structure and said drain region structure is positioned within said transistor cavity.