| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a semiconductor substrate which includes a first surface, a second surface, and an end portion, the semiconductor substrate including a first region of a p-type and a second region of an n-type provided in a corner portion of the semiconductor substrate between the first surface and the end surface, a nitride semiconductor layer on the first surface, and an electrode on the nitride semiconductor layer. |
| 申请公布号 |
US2017077279(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615061973 |
申请日期 |
2016.03.04 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ONIZAWA Takashi |
| 分类号 |
H01L29/778;H01L29/868;H01L29/10;H01L29/20;H01L29/417;H01L23/535 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate that includes a first surface, a second surface, and an end face, the semiconductor substrate including a first region of a p-type and a second region of an n-type provided in a corner portion of the semiconductor substrate between the first surface and the end face; a nitride semiconductor layer on the first surface; and an electrode on the nitride semiconductor layer. |
| 地址 |
Tokyo JP |
