TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as metal structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.

主权项

1. A method for fabricating a trench Schottky rectifier device, comprising steps of:
providing a substrate having a first conductivity type; forming a mask oxide layer on the substrate and forming a plurality of openings in the mask oxide layer; forming a first plurality of trenches and a second plurality of trenches in the substrate according the mask oxide layer; forming a plurality of doped regions having a second conductivity type in the substrate under the first plurality of trenches and the second plurality of trenches; forming an insulating layer on sidewalls of the first plurality of trenches and the second plurality of trenches; remaining a first portion of the mask oxide layer to cover a first portion of the substrate and removing a second portion of the mask oxide layer to expose a second portion of the substrate; forming an adhesion layer on the first portion of the mask oxide layer, the second portion of the substrate, the insulating layer, bottoms of the first plurality of trenches and the second plurality of trenches; filling the first plurality of trenches with a first plurality of conductive structures and filling the second plurality of trenches with a second plurality of conductive structures; and forming an electrode overlying the adhesion layer, the first plurality of conductive structures and the second plurality of conductive structures.