| 发明名称 |
SEGMENTED FIELD PLATE STRUCTURE |
| 摘要 |
A device includes a transistor formed over a substrate. The transistor includes a source structure, a drain structure, and a gate structure. A dielectric layer is formed over the transistor, and a plurality of vias are electrically connected to the source structure. A metal layer is formed over the dielectric layer. The metal layer includes a field plate over the gate structure, a plurality of contact pads over each via, and a plurality of fingers interconnecting each one of the plurality of contact pads to the field plate. |
| 申请公布号 |
US2017077245(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201514856154 |
申请日期 |
2015.09.16 |
| 申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Huang Jenn Hwa;Sun Tianwei;Teplik James A. |
| 分类号 |
H01L29/40;H01L21/3205;H01L29/78 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device, comprising:
a transistor formed over a substrate, the transistor include a source structure, a drain structure, and a gate structure; a dielectric layer over the transistor; a plurality of vias electrically connected to the source structure; and a metal layer over the dielectric layer, the metal layer including:
a field plate over the gate structure,a plurality of contact pads over each via, anda plurality of fingers interconnecting each one of the plurality of contact pads to the field plate. |
| 地址 |
Austin TX US |
