MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A memory device includes a plurality of gate electrode layers, an interlayer insulating layer, a plurality of contact plugs, and at least one contact insulating layer. The gate electrode layers extend in a first direction and have different lengths to form a step structure. The interlayer insulating layer is on the gate electrode layers. The contact plugs are connected to the gate electrode layers through the interlayer insulating layer. The at least one contact insulating layer is within the interlayer insulating layer and surrounds one or more of the contact plugs. The at least one contact insulating layer extends in the first direction.

主权项

1. A memory device, comprising:
a plurality of gate electrode layers extending in a first direction, the gate electrode layers having different lengths on a substrate to form a step structure; an interlayer insulating layer on the gate electrode layers; a plurality of contact plugs connected to the gate electrode layers through the interlayer insulating layer; and at least one contact insulating layer within the interlayer insulating layer and surrounding one or more of the contact plugs, the at least one contact insulating layer extending in the first direction.