| 发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor memory device according to an embodiment includes a plurality of channel layers, a gate-insulating film disposed on the channel layer, a floating gate electrode disposed on the gate-insulating film, a block insulating film disposed over the floating gate electrode, the block insulating film including at least a first insulating film and a second insulating film, the second insulating film including lanthanum and aluminum, and a control gate electrode disposed on the block insulating film. The second insulating film includes an upwardly convex curved portion in a region between the channel layers. |
| 申请公布号 |
US2017077111(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615044373 |
申请日期 |
2016.02.16 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OHBA Ryuji |
| 分类号 |
H01L27/115;H01L21/28;H01L29/423;H01L29/788;H01L29/66 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile semiconductor memory device comprising:
a plurality of channel layers; a gate-insulating film disposed on the channel layers; a floating gate electrode disposed on the gate-insulating film; a block insulating film disposed over the floating gate electrode, the block insulating film comprising at least a first insulating film and a second insulating film, the second insulating film comprising lanthanum and aluminum; and a control gate electrode disposed on the block insulating film, the second insulating film comprising an upwardly convex curved portion in a region between the channel layers. |
| 地址 |
Minato-ku JP |
