SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor structure includes a first high-voltage MOS device region having a first light doping region in a substrate. The conductive type of the substrate is similar to that of the first light doping region. A first well is in the substrate. The first well substantially contacts a side of the first light doping region and does not extend under the first light doping region. The conductive type of the first well is opposite that of the first light doping region. A first gate stack is disposed on a part of the first light doping region and a first well. A first heavy doping region is disposed in the first well and the first light doping region at two sides of the first gate stack. The conductive type of the first heavy doping region is opposite that of the first light doping region.

主权项

1. A semiconductor structure, comprising:
a first high-voltage MOS device region, including: a first light-doping region in a substrate, and a conductive type of the first light-doping region is similar to that of the substrate; a first well disposed in the substrate to substantially contact a side of the first light-doping region without extending under the first light-doping region, wherein a conductive type of the first well is opposite that of the first light-doping region; a first gate stack on a part of the first light-doping region and a part of the first well; a plurality of first heavy-doping regions in the first well and the first light-doping region at two sides of the first gate stack, wherein a conductive type of the first heavy-doping regions is opposite that of the first light-doping region, wherein the first light-doping region between the first well and the first heavy-doping region is a channel region of the first high-voltage MOS device region.