发明名称 EBEAM THREE BEAM APERTURE ARRAY
摘要 Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.
申请公布号 US2017076905(A1) 申请公布日期 2017.03.16
申请号 US201415122400 申请日期 2014.12.19
申请人 Intel Corporation 发明人 BORODOVSKY Yan A.;NELSON Donald W.;PHILLIPS Mark C.
分类号 H01J37/04;G03F7/20;H01L21/768;G03F1/20;H01J37/317;H01J37/302 主分类号 H01J37/04
代理机构 代理人
主权项 1. A blanker aperture array (BAA) for an e-beam tool, the BAA comprising: a first array comprising a first column of openings along a first direction and having a first pitch, and comprising a second column of openings along the first direction and staggered from the first column of openings, the second column of openings having the first pitch; a second array comprising a third column of openings along the first direction and having a second pitch, and comprising a fourth column of openings along the first direction and staggered from the third column of openings, the fourth column of openings having the second pitch; and a third array comprising a fifth column of openings along the first direction and having a third pitch, and comprising a sixth column of openings along the first direction and staggered from the fifth column of openings, the sixth column of openings having the third pitch, wherein a scan direction of the BAA is along a second direction, orthogonal to the first direction.
地址 Santa Clara CA US