发明名称 |
METHODS AND APPARATUS FOR USING ALKYL AMINES FOR THE SELECTIVE REMOVAL OF METAL NITRIDE |
摘要 |
Improved methods and apparatus for removing a metal nitride selectively with respect to exposed or underlying dielectric or metal layers are provided herein. In some embodiments, a method of etching a metal nitride layer atop a substrate, includes: (a) oxidizing a metal nitride layer to form a metal oxynitride layer (MN1-xOx) at a surface of the metal nitride layer, wherein M is one of titanium or tantalum and x is an integer from 0.05 to 0.95; and (b) exposing the metal oxynitride layer (MN1-xOx) to a process gas, wherein the metal oxynitride layer (MN1-xOx) reacts with the process gas to form a volatile compound which desorbs from the surface of the metal nitride layer. |
申请公布号 |
WO2016138218(A8) |
申请公布日期 |
2017.03.16 |
申请号 |
WO2016US19484 |
申请日期 |
2016.02.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SHARMA, Vijay Bhan;ARNEPALLI, Ranga Rao;GORADIA, Prerna;VISSER, Robert Jan |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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