THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

A substrate including gate wirings including gate line and a gate electrode disposed on the substrate, a storage line disposed on the same layer as the gate wirings, a gate insulating layer disposed on the gate wirings and the storage line, an oxide semiconductor layer pattern disposed on the gate insulating layer, data wirings including a data line crossing the gate line, a source electrode disposed on one side of the oxide semiconductor layer pattern, and a drain electrode disposed on another side of the oxide semiconductor layer, and an etch stopper including a first etch stopper portion disposed between the storage line and the data line and partially overlapping both the data line and the storage line.

主权项

1. A substrate, comprising:
gate wirings comprising a gate line and a gate electrode disposed on the substrate; a storage line disposed on the same layer as the gate wirings; a gate insulating layer disposed on the gate wirings and the storage line; an oxide semiconductor layer pattern disposed on the gate insulating layer; data wirings comprising a data line crossing the gate line, a source electrode disposed on one side of the oxide semiconductor layer pattern, and a drain electrode disposed on another side of the oxide semiconductor layer pattern; and an etch stopper comprising a first etch stopper portion, the first etch stopper portion disposed between the storage line and the data line and partially overlapping both the data line and the storage line.