发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor memory device according to an embodiment includes a first semiconductor layer containing an acceptor and a memory cell array including an interlayer insulating layer and a conductive layer arranged in a first direction above the first semiconductor layer and a memory columnar body extending in the first direction and having a lower end positioned lower than a position of a top surface of the first semiconductor layer, the memory columnar body containing a second semiconductor layer in a columnar shape having a side face opposite to a side face of the conductive layer, wherein a first portion of the first semiconductor layer in contact with the side face of the memory columnar body contains a donor in a higher concentration than a second portion different from the first portion of the first semiconductor substrate. |
申请公布号 |
US2017077121(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201514971310 |
申请日期 |
2015.12.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SATO Mitsuru;Kobayashi Shigeki;Murase Tsutomu |
分类号 |
H01L27/115;H01L21/225;H01L29/08;H01L29/167;H01L29/10 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device comprising:
a first semiconductor layer containing an acceptor; and a memory cell array including an interlayer insulating layer and a conductive layer arranged in a first direction above the first semiconductor layer and a memory columnar body extending in the first direction and having a lower end positioned lower than a position of a top surface of the first semiconductor layer, the memory columnar body containing a second semiconductor layer in a columnar shape having a side face opposite to a side face of the conductive layer, a first portion of the first semiconductor layer in contact with the side face of the memory columnar body containing a donor in a higher concentration than a second portion different from the first portion of the first semiconductor layer. |
地址 |
Minato-ku JP |