SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

An embodiment includes: a semiconductor substrate, a memory cell array region including a plurality of conductive layers connected to memory cells arranged in a stacking direction on the semiconductor substrate; a peripheral region including a transistor on the substrate ; a plurality of first layers and second layers stacked alternately in the stacking direction, above the transistor; and a plurality of first contacts penetrating the plurality of first and second layers and connected to the transistor. The plurality of first layers and second layers are stacked alternately in the stacking direction, above the transistor disposed in the peripheral region. A plurality of contacts penetrating the plurality of first layers and second layers are connected to the transistor. Moreover, the first layer mainly contains a different material from the second layer.

主权项

1. A semiconductor memory device, comprising:
a semiconductor substrate; a memory cell array region including a plurality of conductive layers connected to memory cells arranged in a stacking direction on the semiconductor substrate; a peripheral region including a transistor on the semiconductor substrate; a plurality of first layers and second layers stacked alternately in the stacking direction, above the transistor; and a plurality of first contacts penetrating the plurality of first and second layers and connected to the transistor, wherein the first layer mainly contains a different material from the second layer.