SEMICONDUCTOR STRUCTURE

摘要

A semiconductor structure includes an insulating layer, a plurality of stepped conductive vias and a patterned circuit layer. The insulating layer includes a top surface and a bottom surface opposite to the top surface. The stepped conductive vias are disposed at the insulating layer to electrically connect the top surface and the bottom surface. Each of the stepped conductive vias includes a head portion and a neck portion connected to the head portion. The head portion is disposed on the top surface, and an upper surface of the head portion is coplanar with the top surface. A minimum diameter of the head portion is greater than a maximum diameter of the neck portion. The patterned circuit layer is disposed on the top surface and electrically connected to the stepped conductive vias.

主权项

1. A semiconductor structure, comprising:
a first insulating layer, comprising a first top surface and a first bottom surface opposite to the first top surface; a plurality of first stepped conductive vias, disposed at the first insulating layer to electrically connect the first top surface and the first bottom surface, wherein each of the first stepped conductive vias comprises a head portion and a neck portion connected to the head portion, the head portion is disposed at the first top surface, an upper surface of the head portion is coplanar with the first top surface, and a minimum diameter of the head portion is greater than a maximum diameter of the neck portion; and a first patterned circuit layer, disposed at the first top surface and electrically connected to the first stepped conductive vias.