| 发明名称 |
VIA BOTTOM STRUCTURE AND METHODS OF FORMING |
| 摘要 |
Various embodiments include methods and integrated circuit structures. One method includes: forming a via opening through a trench to expose a portion of an underlying metal line; electrolessly plating a metal layer at a bottom of the via opening over the exposed portion of the underlying metal line, the electrolessly plated metal layer formed of a metal not including copper; depositing a cobalt layer to cover the bottom of the via opening over the electrolessly plated metal layer and sidewalls of the via opening; and growing a copper layer over the cobalt layer to form a line within the trench and a via filling the via opening. |
| 申请公布号 |
US2017077037(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201514853131 |
申请日期 |
2015.09.14 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Kelly James J.;Nogami Takeshi |
| 分类号 |
H01L23/532;H01L21/768;H01L23/522 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a via opening through a trench to expose a portion of an underlying metal line; electrolessly plating a metal layer at a bottom of the via opening over the exposed portion of the underlying metal line, the electrolessly plated metal layer formed of a metal not including copper; depositing a cobalt layer to cover the bottom of the via opening over the electrolessly plated metal layer and sidewalls of the via opening; growing a copper layer over the cobalt layer to form a line within the trench and a via filling the via opening; and annealing the trench and the via opening after the growing of the copper laver. |
| 地址 |
Armonk NY US |
