INTERCONNECTION STRUCTURE, FABRICATING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

A semiconductor device includes a semiconductor substrate, a contact region present in the semiconductor substrate, and a silicide present on a textured surface of the contact region. A plurality of sputter ions are present between the silicide and the contact region. Since the surface of the contact region is textured, the contact area provided by the silicide is increased accordingly, thus the resistance of a interconnection structure in the semiconductor device is reduced.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a contact region present in the semiconductor substrate, wherein the contact region comprises a textured surface; a silicide present on the contact region; and a plurality of sputter residues present between the silicide and the contact region.