| 发明名称 |
INTERCONNECTION STRUCTURE, FABRICATING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
A semiconductor device includes a semiconductor substrate comprising a contact region, a silicide present on the contact region, a dielectric layer present on the semiconductor substrate, the dielectric layer comprising an opening to expose a portion of the contact region, a conductor present in the opening, a barrier layer present between the conductor and the dielectric layer, and a metal layer present between the barrier layer and the dielectric layer, wherein a Si concentration of the silicide is varied along a height of the silicide. |
| 申请公布号 |
US2017077032(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201614992997 |
申请日期 |
2016.01.11 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN Yu-Hung;LIU Chi-Wen;TSENG Horng-Huei |
| 分类号 |
H01L23/535;H01L23/532;H01L21/768 |
主分类号 |
H01L23/535 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate comprising a contact region; a silicide present on the contact region; a dielectric layer present on the semiconductor substrate, the dielectric layer comprising an opening to expose a portion of the contact region; a conductor present in the opening; a barrier layer present between the conductor and the dielectric layer; and a metal layer present between the barrier layer and the dielectric layer, wherein a Si concentration of the silicide is varied along a height of the silicide. |
| 地址 |
Hsinchu TW |
