NON-DESTRUCTIVE EPITAXIAL LIFT-OFF OF LARGE AREA III-V THIN-FILM GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND SUBSTRATE REUSE

摘要

Disclosed are methods for preserving the integrity of large-sized growth substrates. The methods pertain to accelerating the rate of epitaxial liftoff, and improved cleaning and etching steps. Also disclosed are devices produced therein.

主权项

1. A method of preserving the surface of a growth substrate after epitaxial lift off, comprising:
providing a growth structure comprising a growth substrate, a sacrificial layer located over the growth substrate, an epilayer located over the sacrificial layer, and at least two protection layers between the growth substrate and the sacrificial layer; lifting off the epitaxial layer by etching the sacrificial layer; removing at least one of the protection layers with an etchant chosen from citric acid, H2O2, H3PO4, NH4OH, H2O and combinations thereof; and removing at least one other protection layer with an etchant chosen from HCl, H3PO4, H2O and combinations thereof.