SEMICONDUCTOR DEVICE

摘要

According to embodiments, a semiconductor device includes a field-effect transistor; a switch; and a controller. The field-effect transistor includes a substrate; a nitride semiconductor layer on the substrate; a drain electrode and a source electrode on the nitride semiconductor layer; and a gate electrode between the drain electrode and the source electrode. The switch switches a potential of the substrate to a plurality of potentials. The controller controls the switch so as to set one potential among the plurality of potentials based on an input to the drain electrode.

主权项

1. A semiconductor device comprising:
a field-effect transistor including a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, wherein a bandgap of the second nitride semiconductor layer is larger than that of the first nitride semiconductor layer, a drain electrode and a source electrode on the second nitride semiconductor layer, and a gate electrode between the drain electrode and the source electrode, wherein a two-dimensional electron gas is generated between the first nitride semiconductor layer and the second nitride semiconductor layer; a switch that switches a potential of the substrate to a plurality of potentials; and a controller that controls the switch so as to set the potential of the substrate which results the minimum ON-resistance of the field-effect transistor among the plurality of potentials based on an input to the drain electrode.