SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device is provided. The semiconductor device includes a substrate; a well region disposed in the substrate; an isolation structure surrounding an active region in the well region; a source region disposed in the well region; a drain region disposed in the well region; a second conductive type first doped region disposed in the well region and disposed along a periphery of the active region; a second conductive type second doped region disposed in the well region and under the source region, the drain region and the second conductive type first doped region, wherein the second conductive type second doped region is in direct contact with the second conductive type first doped region; a source electrode; a drain electrode and a gate electrode. The present disclosure also provides a method for manufacturing the semiconductor device.

主权项

1. A semiconductor device, comprising:
a substrate; a well region disposed in the substrate and having a first conductive type; an isolation structure disposed in the substrate and surrounding an active region in the well region; a source region disposed in the active region and in the well region; a drain region disposed in the active region and in the well region; a second conductive type first doped region disposed in the well region and disposed along a periphery of the active region, wherein the first conductive type is different from the second conductive type, and the isolation structure surrounds the second conductive type first doped region, and wherein the isolation structure has a first depth, the second conductive type first doped region has a second depth, and the first depth is greater than the second depth; a second conductive type second doped region disposed in the well region and under the source region, the drain region and the second conductive type first doped region, wherein the second conductive type second doped region is in direct contact with the second conductive type first doped region; a source electrode electrically connected to the source region; a drain electrode electrically connected to the drain region; and a gate electrode electrically connected to the second conductive type first doped region.