发明名称 AMPLIFIERS INCLUDING TUNABLE TUNNEL FIELD EFFECT TRANSISTOR PSEUDO RESISTORS AND RELATED DEVICES
摘要 Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.
申请公布号 US2017077311(A1) 申请公布日期 2017.03.16
申请号 US201615358822 申请日期 2016.11.22
申请人 Samsung Electronics Co., Ltd. 发明人 Xu Nuo;WANG Jing;CHOI Woosung
分类号 H01L29/786;A61B5/0482;H03F3/45;H01L29/66;H01L29/78 主分类号 H01L29/786
代理机构 代理人
主权项 1. A tunnel field effect transistor (“TFET”) pseudo resistor comprising: a source region having a first conductivity type; a drain region having a second conductivity type that is different from the first conductivity type; a channel region having the first conductivity type between the source region and the drain region; a lightly-doped region between the source region and the channel region; a gate electrode on the channel region; and an electrical connection between the drain region and the gate electrode.
地址 Suwon-si KR
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