发明名称 |
AMPLIFIERS INCLUDING TUNABLE TUNNEL FIELD EFFECT TRANSISTOR PSEUDO RESISTORS AND RELATED DEVICES |
摘要 |
Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity. |
申请公布号 |
US2017077311(A1) |
申请公布日期 |
2017.03.16 |
申请号 |
US201615358822 |
申请日期 |
2016.11.22 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Xu Nuo;WANG Jing;CHOI Woosung |
分类号 |
H01L29/786;A61B5/0482;H03F3/45;H01L29/66;H01L29/78 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A tunnel field effect transistor (“TFET”) pseudo resistor comprising:
a source region having a first conductivity type; a drain region having a second conductivity type that is different from the first conductivity type; a channel region having the first conductivity type between the source region and the drain region; a lightly-doped region between the source region and the channel region; a gate electrode on the channel region; and an electrical connection between the drain region and the gate electrode. |
地址 |
Suwon-si KR |