| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING FIN FET AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device includes a fin structure for a fin field effect transistor (FET). The fin structure includes a base layer protruding from a substrate, an intermediate layer disposed over the base layer and an upper layer disposed over the intermediate layer. The fin structure further includes a first protective layer and a second protective layer made of a different material than the first protective layer. The intermediate layer includes a first semiconductor layer disposed over the base layer, the first protective layer covers at least side walls of the first semiconductor layer and the second protective layer covers at least side walls of the first protective layer. |
| 申请公布号 |
US2017077286(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201514856547 |
申请日期 |
2015.09.16 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LO Hung;HSU Chia-Jung;TSAI Teng-Chun;HSU Tzu-Hsiang;YANG Feng-Cheng |
| 分类号 |
H01L29/78;H01L29/06;H01L29/161;H01L29/66;H01L27/088 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a fin structure for a fin field effect transistor (FET), the fin structure comprising a base layer protruding from a substrate, an intermediate layer disposed over the base layer and an upper layer disposed over the intermediate layer; an isolation insulating layer disposed on the substrate; a first protective layer; and a second protective layer made of a different material than the first protective layer, wherein: the intermediate layer includes a first semiconductor layer disposed over the base layer, the first protective layer covers at least side walls of the first semiconductor layer and side walls of the base layer, the second protective layer covers at least side walls of the first protective layer, and the base layer, the first protective layer and the second protective layer are embedded in an isolation insulating layer. |
| 地址 |
Hsinchu TW |
