发明名称 ELECTRONICAL DEVICE
摘要 Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.
申请公布号 US2017077282(A1) 申请公布日期 2017.03.16
申请号 US201615265647 申请日期 2016.09.14
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 LEE Hyung Seok;KIM Ki Hwan;KO Sang Choon;KIM Zin-Sig;NA Jeho;NAM EUN SOO;PARK Young Rak;PARK Junbo;JUN Chi Hoon;JUNG Dong Yun
分类号 H01L29/778;H01L29/205;H01L29/20;H01L29/40;H01L29/423 主分类号 H01L29/778
代理机构 代理人
主权项 1. An electronic device comprising: a substrate; a first semiconductor layer disposed on the substrate and comprising a group III-V semiconductor compound; a second semiconductor layer covering at least a part of the first semiconductor layer and comprising the group III-V semiconductor compound; a source electrode and a drain electrode disposed on the first semiconductor layer and spaced apart horizontally from each other; a gate electrode disposed on the second semiconductor layer and between the source electrode and the drain electrode; and a field plate contacting the source electrode and extending towards the drain electrode, wherein as the field plate becomes closer to the drain electrode, the field plate becomes farther away from the substrate.
地址 Daejeon KR