FINFET STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

摘要

Present disclosure provides a FinFET structure, including a plurality of fins, a gate, and a first dopant layer. The gate is disposed substantially orthogonal over the plurality of fins, covering a portion of a top surface and a portion of sidewalls of the plurality of fins. The first dopant layer covers the top surface and the sidewalls of a junction portion of a first fin, configured to provide dopants of a first conductive type to the junction portion of the first fin. The junction portion is adjacent to the gate.

主权项

1. A method for manufacturing a FinFET structure, comprising:
forming a plurality of semiconductor fins; forming a diffusion barrier over a top surface and a sidewall of a first set of a plurality of semiconductor fins; forming a first dopant layer over a top surface and a sidewall of a second set of the plurality of semiconductor fins, the first dopant layer comprising dopants of a first conductive type; diffusing the dopants of the first conductive type into the second set of the plurality of semiconductor fins by an annealing operation, wherein the dopant concentration of the dopants of the first conductive type in proximity to the top surface is controlled to be substantially identical to the dopant concentration of the dopants of the first conductive type in proximity to a bottom sidewall of the second set of the plurality of the semiconductor fins.