| 发明名称 |
PREVENTING LEAKAGE INSIDE AIR-GAP SPACER DURING CONTACT FORMATION |
| 摘要 |
Techniques for preventing leakage of contact material into air-gap spacers during contact formation. For example, a method comprises forming a contact trench on a semiconductor structure over an air-gap spacer and depositing a liner in the contact trench. The liner deposition material fills a portion of the air-gap spacer pinching off the contact trench to the air-gap spacer. |
| 申请公布号 |
US2017077258(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615278925 |
申请日期 |
2016.09.28 |
| 申请人 |
International Business Machines Corporation ;GLOBALFOUNDRIES Inc. |
发明人 |
Cheng Kangguo;Xie Ruilong;Yamashita Tenko |
| 分类号 |
H01L29/49;H01L21/768;H01L23/535 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device, comprising the steps of:
forming a contact trench on a semiconductor structure over an air-gap spacer; and depositing a liner in the contact trench; wherein the liner fills a portion of the air-gap spacer pinching off the contact trench from the air-gap spacer. |
| 地址 |
Armonk NY US |
