HIGH-VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present invention provides a high-voltage metal-oxide-semiconductor transistor device and a manufacturing method thereof. First, a semiconductor substrate is provided and a dielectric layer and a conductive layer sequentially stacked on the semiconductor substrate. Then, the conductive layer is patterned to form a gate and a dummy gate disposed at a first side of the gate and followed by forming a first spacer between the gate and the dummy gate and a second spacer at a second side of the gate opposite to the first side, wherein the first spacer includes an indentation. Subsequently, the dummy gate is removed.

主权项

1: A high-voltage (HV) metal-oxide-semiconductor (MOS) transistor device, comprising:
a semiconductor substrate; a gate structure disposed on the semiconductor substrate, wherein the gate structure comprises:
a gate;a first spacer disposed at a first side of the gate, wherein the first spacer comprises a first indentation;a second spacer disposed at a second side of the gate opposite to the first side; anda gate dielectric layer disposed between the gate and the semiconductor substrate and between the first spacer and the semiconductor substrate; a first doped region disposed in the semiconductor substrate and adjacent to the first spacer, wherein the first spacer is disposed between the first doped region and the gate; and a second doped region disposed in the semiconductor substrate and adjacent to the second spacer, wherein the second spacer is disposed between the second doped region and the gate.